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10.1021/acs.nanolett.5b01748 http://scihub22266oqcxt.onion/10.1021/acs.nanolett.5b01748 C4498448!4498448 !26052733     free     free     free Warning: file_get_contents(https://eutils.ncbi.nlm.nih.gov/entrez/eutils/elink.fcgi?dbfrom=pubmed&id=26052733 &cmd=llinks): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 215 Deprecated: Implicit conversion from float 209.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Deprecated: Implicit conversion from float 209.6 to int loses precision in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 534 Warning: imagejpeg(C:\Inetpub\vhosts\kidney.de\httpdocs\phplern\26052733 .jpg): Failed to open stream: No such file or directory in C:\Inetpub\vhosts\kidney.de\httpdocs\pget.php on line 117       Nano+Lett 2015 ; 15 (7 ): 4783-7 Nephropedia Template TP {{tp|p=26052733 |t=2015. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures |pdf=|usr=}}{{26052733 }} gab.com Text Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures JO: Nano Lett http://www.kidney.de/pget.php?&tw=1&pmid=26052733 #FOAvip In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor-liquid-solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I-V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm(2). Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ?111? oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device. Twit Text FOAVip Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures ????Nano Lett http://www.kidney.de/pget.php?&tw=1&pmid=26052733 #FOAvip Twit Text # Free Paper on # # # # # LINK http://www.kidney.de/pget.php?&tw=1&pmid=26052733 #FOAvip English Wikipedia <ref>{{Cite pmid|26052733 }}</ref> Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures #MMPMID26052733 Kral S ; Zeiner C ; Stöger-Pollach M ; Bertagnolli E ; den Hertog MI ; Lopez-Haro M ; Robin E ; El Hajraoui K ; Lugstein A Nano Lett 2015[Jul]; 15 (7 ): 4783-7 PMID26052733 show ga In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor-liquid-solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I-V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm(2). Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ?111? oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device. äAbrupt Schottky Junctions in Al/Ge Nanowire Heterostructures (epmc).pdf DeepDyve Pubget Overpricing