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10.1038/ncomms13575

http://scihub22266oqcxt.onion/10.1038/ncomms13575
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C5123048!5123048 !27882926
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suck abstract from ncbi


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pmid27882926
      Nat+Commun 2016 ; 7 (ä): 13575
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  • A CMOS silicon spin qubit #MMPMID27882926
  • Maurand R ; Jehl X ; Kotekar-Patil D ; Corna A ; Bohuslavskyi H ; Laviéville R ; Hutin L ; Barraud S ; Vinet M ; Sanquer M ; De Franceschi S
  • Nat Commun 2016[Nov]; 7 (ä): 13575 PMID27882926 show ga
  • Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.
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